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1. product pro?le 1.1 general description planar maximum ef?ciency general application (mega) schottky barrier recti?er with an integrated guard ring for stress protection, encapsulated in a sod523 (sc-79) ultra small and ?at lead surface-mounted device (smd) plastic package. 1.2 features n average forward current: i f(av) 0.2 a n reverse voltage: v r 30 v n low reverse current: i r 1 m a n aec-q101 quali?ed n ultra small and ?at lead smd plastic package 1.3 applications n low current recti?cation n high ef?ciency dc-to-dc conversion n switch mode power supply (smps) n reverse polarity protection n low power consumption applications 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, mounting pad for cathode 1 cm 2 . [2] pulse test: t p 300 m s; d 0.02. RB520S30 200 ma low v f mega schottky barrier recti?er rev. 01 6 october 2009 product data sheet table 1. quick reference data t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i f(av) average forward current square wave; d = 0.5; f=20khz t amb 105 c [1] - - 0.2 a t sp 135 c - - 0.2 a i r reverse current v r =10v --1 m a v r reverse voltage - - 30 v v f forward voltage i f = 0.2 a [2] - 520 600 mv
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 2 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er 2. pinning information [1] the marking bar indicates the cathode. 3. ordering information 4. marking 5. limiting values table 2. pinning pin description simpli?ed outline graphic symbol 1 cathode [1] 2 anode 2 1 sym001 12 table 3. ordering information type number package name description version RB520S30 sc-79 plastic surface-mounted package; 2 leads sod523 table 4. marking codes type number marking code RB520S30 za table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v r reverse voltage t j =25 c - 30 v i f(av) average forward current square wave; d = 0.5; f=20khz t amb 105 c [1] - 0.2 a t sp 135 c - 0.2 a i fsm non-repetitive peak forward current t p = 8.3 ms half sine wave; jedec method [2] -1a p tot total power dissipation t amb 25 c [3] [4] - 275 mw [3] [1] - 420 mw [3] [5] - 500 mw
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 3 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er [1] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 . [2] t j =25 c prior to surge. [3] re?ow soldering is the only recommended soldering method. [4] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [5] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. 6. thermal characteristics [1] for schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses p r are a signi?cant part of the total power losses. [2] re?ow soldering is the only recommended soldering method. [3] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [4] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 . [5] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. [6] soldering point of cathode tab. t j junction temperature - 150 c t amb ambient temperature - 55 +150 c t stg storage temperature - 65 +150 c table 5. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] [2] [3] - - 455 k/w [4] - - 300 k/w [5] - - 250 k/w r th(j-sp) thermal resistance from junction to solder point [6] --90k/w
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 4 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er fr4 pcb, standard footprint fig 1. transient thermal impedance from junction to ambient as a function of pulse duration; typical values fr4 pcb, mounting pad for cathode 1 cm 2 fig 2. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab700 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 006aab701 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 5 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v f forward voltage [1] i f = 0.1 ma - 190 220 mv i f = 1 ma - 250 290 mv i f = 10 ma - 320 360 mv i f = 100 ma - 440 500 mv i f = 200 ma - 520 600 mv i r reverse current v r =10v --1 m a c d diode capacitance f = 1 mhz; v r =1v - - 20 pf (1) t j = 150 c (2) t j = 125 c (3) t j =85 c (4) t j =25 c (5) t j = - 40 c (1) t j = 125 c (2) t j =85 c (3) t j =25 c (4) t j = - 40 c fig 3. forward current as a function of forward voltage; typical values fig 4. reverse current as a function of reverse voltage; typical values 006aab702 10 - 3 10 - 2 10 - 1 1 i f (a) 10 - 4 v f (v) 0.0 0.8 0.6 0.2 0.4 (1) (2) (3) (4) (5) 006aab703 v r (v) 030 20 10 10 - 6 10 - 8 10 - 7 10 - 4 10 - 5 10 - 3 i r (a) 10 - 9 (1) (2) (3) (4)
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 6 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er f = 1 mhz; t amb =25 ct j = 150 c (1) d = 0.1 (2) d = 0.2 (3) d = 0.5 (4) d =1 fig 5. diode capacitance as a function of reverse voltage; typical values fig 6. average forward power dissipation as a function of average forward current; typical values t j = 125 c (1) d =1 (2) d = 0.9 (3) d = 0.8 (4) d = 0.5 fr4 pcb, standard footprint t j = 150 c (1) d = 1; dc (2) d = 0.5; f = 20 khz (3) d = 0.2; f = 20 khz (4) d = 0.1; f = 20 khz fig 7. average reverse power dissipation as a function of reverse voltage; typical values fig 8. average forward current as a function of ambient temperature; typical values v r (v) 030 20 10 006aab704 35 c d (pf) 0 5 10 15 20 25 30 006aab705 i f(av) (a) 0.0 0.3 0.2 0.1 0.08 0.12 0.04 0.16 0.20 p f(av) (w) 0.0 (1) (2) (3) (4) 006aab706 v r (v) 030 20 10 0.004 0.006 0.002 0.008 0.01 p r(av) (w) 0.0 (1) (2) (3) (4) t amb ( c) 0 50 100 150 175 125 75 25 006aab707 0.1 0.2 0.3 i f(av) (a) 0.0 (1) (2) (3) (4)
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 7 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er 8. test information fr4 pcb, mounting pad for cathode 1 cm 2 t j = 150 c (1) d = 1; dc (2) d = 0.5; f = 20 khz (3) d = 0.2; f = 20 khz (4) d = 0.1; f = 20 khz t j = 150 c (1) d = 1; dc (2) d = 0.5; f = 20 khz (3) d = 0.2; f = 20 khz (4) d = 0.1; f = 20 khz fig 9. average forward current as a function of ambient temperature; typical values fig 10. average forward current as a function of solder point temperature; typical values t amb ( c) 0 50 100 150 175 125 75 25 006aab708 0.1 0.2 0.3 i f(av) (a) 0.0 (1) (2) (3) (4) t sp ( c) 0 50 100 150 175 125 75 25 006aab709 0.1 0.2 0.3 i f(av) (a) 0.0 (1) (2) (3) (4) (1) i r =1ma input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty cycle d = 0.05 oscilloscope: rise time t r = 0.35 ns fig 11. reverse recovery time test circuit and waveforms t rr (1) + i f t output signal t r t p t 10 % 90 % v r input signal v = v r + i f r s r s = 50 w i f d.u.t. r i = 50 w sampling oscilloscope mga881
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 8 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er the current ratings for the typical waveforms as shown in figure 8 , 9 and 10 are calculated according to the equations: with i m de?ned as peak current, at dc, and with i rms de?ned as rms current. 8.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline fig 12. duty cycle de?nition t 1 t 2 p t 006aaa812 duty cycle d = t 1 t 2 i fav () i m d = i rms i fav () = i rms i m d = fig 13. package outline sod523 (sc-79) 02-12-13 dimensions in mm 1.65 1.55 1.25 1.15 0.17 0.11 0.34 0.26 0.65 0.58 0.85 0.75 1 2
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 9 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er 10. packing information [1] for further information and the availability of packing methods, see section 14 . 11. soldering table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 8000 10000 RB520S30 sod523 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 re?ow soldering is the only recommended soldering method. fig 14. re?ow soldering footprint sod523 (sc-79) solder lands solder resist occupied area solder paste dimensions in mm 0.6 (2 ) 0.5 (2 ) 2.15 1.1 0.7 (2 ) 0.8 (2 ) 1.2 sod523_fr
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 10 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er 12. revision history table 9. revision history document id release date data sheet status change notice supersedes RB520S30_1 20091006 product data sheet - -
RB520S30_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 6 october 2009 11 of 12 nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors RB520S30 200 ma low v f mega schottky barrier recti?er ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 6 october 2009 document identifier: RB520S30_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.1 quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 packing information. . . . . . . . . . . . . . . . . . . . . . 9 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 contact information. . . . . . . . . . . . . . . . . . . . . 11 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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